1/4 2011.11 - rev.a bi direction esd protection diode RSB39F2 ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) esd protection ? features 1)small mold type. (umd3) 2)high reliability. 3)bi-directionality. ? constructions silicon epitaxial planer ? structure ? absolute maximum ratings (ta=25 c) symbol unit pd mw tj c tstg c ? electrical characteristics (ta=25 c) symbol min. typ. max. unit conditions zener voltage v z 35.1 - 42.9 v i z =1ma reverse current i r - - 0.1 a v r =30v ct - - 30 pf v r =0v , f=1mhz * zener voltage (vz) shall be measured at 40ms after loading current. rating of per diode. junction capacitance ? taping dimensions (unit : mm) parameter limits power dissipation (*) 200 junction temperature 150 storage temperature ? 55 to + 150 (*) total two elements parameter rohm : umd3 jeita : sc - 70 jedec : sot - 323 dot(year week factory) umd3 0.9min. 0.8min. 1.6 0.65 1.3 4.00.1 4.00.1 2.00.05 1.550.05 3.50.05 1.750.1 8.00.2 0.50.05 2.40.1 2.250.1 0 5.50.2 1.250.1 2.40.1 0.30.1 00.1 2.00.2 2.10.1 1.250.1 0.30.1 `?? ? (3) 1.30.1 0.65 0.65 (2) (1) 0.150.05 0.90.1 0.70.1 0.1min 00.1 each lead has same dimension data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RSB39F2 2/4 2011.11 - rev.a 0.01 0.1 1 10 25 30 35 40 45 zener current:iz(ma) zener voltage:vz(v) vz - iz characteristics(1) ta= ? 25 c ta=125 c ta=75 c ta=25 c ta=150 c apply voltage 0.01 0.1 1 10 25 30 35 40 45 zener current:iz(ma) zener voltage:vz(v) vz - iz characteristics(2) ta= ? 25 c ta=125 c ta=75 c ta=25 c ta=150 c apply voltage 0.01 0.1 1 10 100 1000 10000 0 5 10 15 20 25 30 ta=125 c ta=25 c ta=75 c reverse current:i r (na) reverse voltage v r (v) v r -i r characteristics(1) ta=150 c apply voltage 0.01 0.1 1 10 100 1000 10000 0 5 10 15 20 25 30 reverse current:i r (na) reverse voltage v r (v) v r -i r characteristics(2) ta=125 c ta=25 c ta=75 c ta=150 c apply voltage 1 10 100 0 5 10 15 20 25 capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics(1) f=1mhz apply voltage 1 10 100 0 1 2 3 4 capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics(2) f=1mhz apply voltage www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RSB39F2 3/4 2011.11 - rev.a 30 31 32 33 34 35 36 37 38 39 40 zener voltage:vz(v) ta=25 c i z =1ma n=30pcs ave:35.59v vz dispersion map ave:37.55v apply voltage apply voltage 0 1 2 3 4 5 6 7 8 9 10 reverse current:i r (na) ta=25 c v r =30v n=30pcs ave:0.84na i r dispersion map ave:2.15na apply voltage apply voltage 5 6 7 8 9 10 capacitance between terminals:ct(pf) ta=25 c f=1mhz v r =0v n=20pcs ct dispersion map ave 8.55pf ave 8.53pf apply voltage apply voltage 1 10 100 1000 10000 100000 0.1 1 10 dynamic impedance:zz( ) zener current(ma) zz - iz characteristics(1) apply voltage 1 10 100 1000 10000 100000 0.1 1 10 dynamic impedance:zz( ) zener current(ma) zz - iz characteristics(2) apply voltage 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 transient thermal impedance rth( c/w) rth(j - a) rth(j - c) on glass - epoxy substrate time(s) rth - t characteristics www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RSB39F2 4/4 2011.11 - rev.a 0 5 10 15 20 25 30 no break at 30kv c=200pf r=0 c=150pf r=330 c=100pf r=1.5k ave 6.1kv electrostatic discharge test esd [kv] esd dispersion map(1) ave 25.5kv apply voltage 0 5 10 15 20 25 30 no break at 30kv c=200pf r=0 c=150pf r=330 c=100pf r=1.5k ave 6.9kv electrostatic discharge test esd [kv] esd dispersion map(2) apply voltage www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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